Unisantis, IME to develop Surrounding Gate Transistor in S’pore
ConvergenceAsia staff
04/12/2007

Leading technology research and development company Unisantis Electronics (Japan) and the Institute of Microelectronics (IME) have announced a collaborative research agreement to develop the world’s first three-dimensional transistor locally.

A team of researchers will be assembled in Singapore to develop the device, known as the Surrounding Gate Transistor (SGT). The team will be headed by Unisantis’ chief technology officer Fujio Masuoka.

A world-renowned scientist, Prof Masuoka invented the flash memory storage format that allows handheld gadgets like digital cameras and MP3 players to retain stored information even after they are switched off. He has also been involved in the research and development into numerous types of computing memory devices, including programmable read-only memory and random access memory.

According to Prof Masuoka, next-generation integrated circuit (IC) chips fabricated with the SGT could be up to 10 times faster than existing chips built using conventional, two dimensional transistors with horizontally-arranged components. In addition, SGT-based chips could generate less heat and cost less to produce compared to existing ones.

“The SGT also allows further improvements in silicon-based semiconductors, in terms of transistor size and processing speed, for at least 30 more years before the theoretical limits are reached. Such improvements are necessary for new-generation IC chips to meet the computing power demanded by IT products and computing networks of ever-increasing functionality and complexity,” said Prof Masuoka, who has been awarded the prestigious 2007 Medal with Purple Ribbon by Emperor Akihito of Japan and the 2005 Innovation Award by The Economist.

Both organisations envision the team of researchers to comprise academics, engineers and scientists from countries including Singapore, China, Korea, Malaysia and Taiwan.

IME will provide its expertise in silicon nanoelectronics research and complementary metal oxide semiconductor (CMOS) processing, as well as state-of-the-art laboratory facilities at its premises in Science Park II for prototype development.

Commented Prof Kwong Dim-Lee, Executive Director of IME, "The collaboration with Unisantis will enable IME to utilise our expertise in silicon nanoelectronics and our state-of-the-art wafer processing facilities to realise the SGT."

The agreement will be in place for 24 months beginning immediately, and may be extended if necessary.

advertisement